Inno Laser announced that its "High-Power Thin-Disk Ultrafast Laser" project has passed the acceptance inspection for the National Science and Technology Major Project. As a key supported project under the National "02 Special Project" (officially named "Ultra-Large-Scale Integrated Circuit Manufacturing Technology and Complete Process" project) , this initiative took five years of R&D with a total investment exceeding RMB 200 million. Its achievements have laid a core foundation for domestic EUV lithography light sources, marking a breakthrough in the localization of key technologies.

The project team has overcome 12 key technical challenges, including the preparation of high-power laser gain media and beam quality control. The developed laser boasts outstanding core performance: it achieves an output power of 500W and a pulse width controlled within 100fs (well within the 10fs-250ms measurement range specified in national standards) , with key performance indicators reaching 85% of those of international counterparts. Adopting an all-solid-state structure, its volume is 70% smaller than that of traditional EUV light sources, and its operational stability is 40% higher than that of imported products—making it fully compatible with the high-frequency pulse requirements of EUV lithography equipment.

Currently, the project has achieved small-batch production and delivered 10 prototypes to a domestic lithography machine R&D enterprise (reported to be SMEE, a long-term collaborator of Inno Laser) for integration testing. A total of 32 patents have been filed, including 18 invention patents. Industry experts pointed out that the EUV light source is the "heart" of lithography equipment. Inno Laser's breakthrough has broken the technical monopoly of foreign enterprises, pushing the R&D of domestic EUV lithography equipment a crucial step forward. Industrial application is expected to be realized in 2026.